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Cree/Wolfspeed |
1200V, 75 MOHM, G3 SIC MOSFET
- FET Type: N-Channel
- Technology: SiC (Silicon Carbide Junction Transistor)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
- Vgs (Max): +19V, -8V
- FET Feature: -
- Power Dissipation (Max): 113.6W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Stock2,576 |
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Cree/Wolfspeed |
MOSFET N-CH 1200V 60A TO-247
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 2.8V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 115nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1893pF @ 1000V
- Vgs (Max): +25V, -10V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 52 mOhm @ 40A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock4,448 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 11.5A
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
- Vgs (Max): +18V, -8V
- FET Feature: -
- Power Dissipation (Max): 54W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock18,216 |
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Cree/Wolfspeed |
RF MOSFET HEMT 50V 12VFDFN
- Transistor Type: HEMT
- Frequency: 6GHz
- Gain: 21dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 60mA
- Power - Output: 15W
- Voltage - Rated: 125V
- Package / Case: 12-VFDFN Exposed Pad
- Supplier Device Package: 12-DFN (4x3)
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Package: 12-VFDFN Exposed Pad |
Stock6,288 |
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Cree/Wolfspeed |
FET RF 125V 2.2GHZ 440162
- Transistor Type: HEMT
- Frequency: 1.8GHz ~ 2.2GHz
- Gain: 20dB
- Voltage - Test: 50V
- Current Rating: 6A
- Noise Figure: -
- Current - Test: 500mA
- Power - Output: 100W
- Voltage - Rated: 125V
- Package / Case: 440162
- Supplier Device Package: 440162
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Package: 440162 |
Stock4,848 |
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Cree/Wolfspeed |
FET RF 100V 6GHZ 12DFN
- Transistor Type: HEMT
- Frequency: 6GHz
- Gain: 16dB
- Voltage - Test: 40V
- Current Rating: 2A
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 29W
- Voltage - Rated: 100V
- Package / Case: 12-VFDFN Exposed Pad
- Supplier Device Package: 12-DFN (4x3)
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Package: 12-VFDFN Exposed Pad |
Stock7,312 |
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Cree/Wolfspeed |
RF MOSFET HEMT 28V DIE
- Transistor Type: HEMT
- Frequency: 6GHz
- Gain: 15dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 250mA
- Power - Output: 30W
- Voltage - Rated: 84V
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock7,088 |
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Cree/Wolfspeed |
FET RF 125V 5.9GHZ 440217
- Transistor Type: HEMT
- Frequency: 5.2GHz ~ 5.9GHz
- Gain: 11.2dB
- Voltage - Test: 50V
- Current Rating: 24A
- Noise Figure: -
- Current - Test: 1A
- Power - Output: 450W
- Voltage - Rated: 125V
- Package / Case: 440217
- Supplier Device Package: 440217
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Package: 440217 |
Stock4,528 |
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Cree/Wolfspeed |
FET RF 125V 24A 440217
- Transistor Type: HEMT
- Frequency: 2.7GHz ~ 3.1GHz
- Gain: 13.5dB
- Voltage - Test: 50V
- Current Rating: 24A
- Noise Figure: -
- Current - Test: 500mA
- Power - Output: 500W
- Voltage - Rated: 125V
- Package / Case: 440217
- Supplier Device Package: 440217
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Package: 440217 |
Stock5,904 |
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Cree/Wolfspeed |
FET RF 84V 4GHZ 440199
- Transistor Type: HEMT
- Frequency: 0Hz ~ 4GHz
- Gain: 12.5dB
- Voltage - Test: 28V
- Current Rating: 28A
- Noise Figure: -
- Current - Test: 1A
- Power - Output: 100W
- Voltage - Rated: 84V
- Package / Case: 440199
- Supplier Device Package: 440199
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Package: 440199 |
Stock6,276 |
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Cree/Wolfspeed |
FET RF 150V 4GHZ 440193
- Transistor Type: HEMT
- Frequency: 0Hz ~ 4GHz
- Gain: 12.5dB
- Voltage - Test: 50V
- Current Rating: 6.3A
- Noise Figure: -
- Current - Test: 300mA
- Power - Output: 50W
- Voltage - Rated: 150V
- Package / Case: 440193
- Supplier Device Package: 440193
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Package: 440193 |
Stock7,920 |
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Cree/Wolfspeed |
RF MOSFET HEMT 28V 440193
- Transistor Type: HEMT
- Frequency: 3GHz
- Gain: 13dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 300mA
- Power - Output: 60W
- Voltage - Rated: 84V
- Package / Case: 440193
- Supplier Device Package: 440193
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Package: 440193 |
Stock6,400 |
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Cree/Wolfspeed |
FET RF 84V 5.8GHZ 440166
- Transistor Type: HEMT
- Frequency: 5.5GHz ~ 5.8GHz
- Gain: 10dB
- Voltage - Test: 28V
- Current Rating: 3A
- Noise Figure: -
- Current - Test: 250mA
- Power - Output: 30W
- Voltage - Rated: 84V
- Package / Case: 440166
- Supplier Device Package: 440166
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Package: 440166 |
Stock7,776 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 19A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 19A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 150µA @ 1200V
- Capacitance @ Vr, F: 390pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,568 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 9A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 9A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 167pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,688 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 6A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 6A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 294pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock29,184 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 3A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 155pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock8,640 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 251pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock36,240 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 4A TO220-F2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 120pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack, Isolated Tab
- Supplier Device Package: TO-220-F2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 Full Pack, Isolated Tab |
Stock17,256 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 39A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 39A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 95µA @ 650V
- Capacitance @ Vr, F: 878pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock18,828 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 17.5A TO252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Capacitance @ Vr, F: 455pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,188 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 10A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Capacitance @ Vr, F: 1000pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock19,740 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 10A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 60µA @ 650V
- Capacitance @ Vr, F: 480pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock16,980 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 8A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 7.5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Capacitance @ Vr, F: 560pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock9,036 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 8A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 441pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock34,488 |
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Cree/Wolfspeed |
TEST FIXTURE FOR CGHV40100P
- Type: FET
- Frequency: 500MHz ~ 2.5GHz
- For Use With/Related Products: CGHV40100
- Supplied Contents: Partially Populated Board - Main IC Not Included
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Package: - |
Stock3,420 |
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Cree/Wolfspeed |
TEST FIXTURE FOR CGHV35150F
- Type: FET
- Frequency: 2.9GHz ~ 3.5GHz
- For Use With/Related Products: CGHV35150
- Supplied Contents: Partially Populated Board - Main IC Not Included
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Package: - |
Stock6,354 |
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Cree/Wolfspeed |
BOARD DEMO AMP CIRCUIT CGH40006P
- Type: HEMT
- Frequency: 500MHz ~ 6GHz
- For Use With/Related Products: CGH40006P
- Supplied Contents: Partially Populated Board - Main IC Not Included
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Package: - |
Stock5,148 |
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