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Cree/Wolfspeed |
MOSFET N-CH SICFET 1200V 50A DIE
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
- Vgs (Max): +25V, -5V
- FET Feature: -
- Power Dissipation (Max): 313mW (Tj)
- Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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Package: Die |
Stock5,232 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 11A
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
- Vgs (Max): +18V, -8V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Stock18,312 |
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Cree/Wolfspeed |
MOSFET N-CH SICFET 1.2KV TO247-4
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 30.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 4V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 1000V
- Vgs (Max): +19V, -8V
- FET Feature: -
- Power Dissipation (Max): 119W (Tc)
- Rds On (Max) @ Id, Vgs: 90 mOhm @ 20A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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Package: TO-247-4 |
Stock22,176 |
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Cree/Wolfspeed |
900V, 120 MOHM, G3 SIC MOSFET
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
- Vgs (Max): +18V, -8V
- FET Feature: -
- Power Dissipation (Max): 97W (Tc)
- Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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Package: TO-247-3 |
Stock16,020 |
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Cree/Wolfspeed |
RF MOSFET HEMT 28V 440095
- Transistor Type: HEMT
- Frequency: 2.5GHz
- Gain: 21.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 1.2A
- Power - Output: 120W
- Voltage - Rated: 84V
- Package / Case: 440095
- Supplier Device Package: 440095
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Package: 440095 |
Stock6,368 |
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Cree/Wolfspeed |
RF MOSFET HEMT 28V DIE
- Transistor Type: HEMT
- Frequency: 6GHz
- Gain: 15dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 100mA
- Power - Output: 8W
- Voltage - Rated: 84V
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock6,012 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 12.5A TO220
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 12.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: 470pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock5,232 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 24.5A TO252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 24.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Capacitance @ Vr, F: 560pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock6,096 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 20A TO263-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 26pF @ 400V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock4,144 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 11.5A TO252
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 11.5A
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 155pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock102,312 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 8A TO252-2
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 120pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock7,120 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 2A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 120pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock3,952 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 2A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 120pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock24,858 |
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Cree/Wolfspeed |
DIODE SCHKY SIC 650V 20A TO-220
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 20A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.45V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 80µA @ 650V
- Capacitance @ Vr, F: 1100pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock7,260 |
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Cree/Wolfspeed |
DIODE ARRAY SCHOTTKY 600V TO247
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Package: TO-247-3 |
Stock4,592 |
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Cree/Wolfspeed |
TEST FIXTURE FOR CGHV40300F
- Type: FET
- Frequency: 960MHz ~ 1.4GHz
- For Use With/Related Products: CGHV40030
- Supplied Contents: Partially Populated Board - Main IC Not Included
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Package: - |
Stock6,732 |
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Cree/Wolfspeed |
EVAL BOARD FOR CGHV50200
- Type: HEMT
- Frequency: 4.4GHz ~ 5GHz
- For Use With/Related Products: CGHV50200
- Supplied Contents: Board
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Package: - |
Stock7,686 |
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Cree/Wolfspeed |
TEST FIXTURE FOR CGHV96100F2
- Type: FET
- Frequency: 8.4GHz ~ 9.6GHz
- For Use With/Related Products: CGHV96100
- Supplied Contents: Partially Populated Board - Main IC Not Included
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Package: - |
Stock4,932 |
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Cree/Wolfspeed |
IC AMP GAN HEMT MMIC 780019
- Frequency: 20MHz ~ 6GHz
- P1dB: -
- Gain: 18.8dB
- Noise Figure: -
- RF Type: -
- Voltage - Supply: 2 V ~ 28 V
- Current - Supply: -
- Test Frequency: 500MHz
- Package / Case: 780019
- Supplier Device Package: 780019
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Package: 780019 |
Stock8,226 |
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