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Cree/Wolfspeed |
MOSFET N-CH 900V 35A D2PAK-7
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 2.1V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
- Vgs (Max): +19V, -8V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Stock3,520 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 11A
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 600V
- Vgs (Max): +18V, -8V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 360 mOhm @ 7.5A, 15V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
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Package: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
Stock19,680 |
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Cree/Wolfspeed |
FET RF 50V 2.7GHZ 440162
- Transistor Type: HEMT
- Frequency: 2.5GHz ~ 2.7GHz
- Gain: 18dB
- Voltage - Test: 50V
- Current Rating: 6A
- Noise Figure: -
- Current - Test: 500mA
- Power - Output: 100W
- Voltage - Rated: 50V
- Package / Case: 440162
- Supplier Device Package: 440162
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Package: 440162 |
Stock7,968 |
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Cree/Wolfspeed |
RF MOSFET HEMT 28V DIE
- Transistor Type: HEMT
- Frequency: 6GHz
- Gain: 15dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 200mA
- Power - Output: 15W
- Voltage - Rated: 84V
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock5,408 |
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Cree/Wolfspeed |
RF MOSFET HEMT 50V DIE
- Transistor Type: HEMT
- Frequency: 4GHz
- Gain: 19dB
- Voltage - Test: 50V
- Current Rating: -
- Noise Figure: -
- Current - Test: 500mA
- Power - Output: 320W
- Voltage - Rated: 150V
- Package / Case: Die
- Supplier Device Package: Die
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Package: Die |
Stock5,264 |
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Cree/Wolfspeed |
RF MOSFET HEMT 28V 440166
- Transistor Type: HEMT
- Frequency: 3GHz
- Gain: 14.5dB
- Voltage - Test: 28V
- Current Rating: -
- Noise Figure: -
- Current - Test: 150mA
- Power - Output: 30W
- Voltage - Rated: 84V
- Package / Case: 440166
- Supplier Device Package: 440166
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Package: 440166 |
Stock6,792 |
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Cree/Wolfspeed |
FET RF 125V 3GHZ 440193
- Transistor Type: HEMT
- Frequency: 0Hz ~ 3GHz
- Gain: 11dB
- Voltage - Test: 50V
- Current Rating: 8.7A
- Noise Figure: -
- Current - Test: 600mA
- Power - Output: 116W
- Voltage - Rated: 125V
- Package / Case: 440193
- Supplier Device Package: 440193
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Package: 440193 |
Stock14,844 |
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Cree/Wolfspeed |
MOSFET 2N-CH 1200V 168A MODULE
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 168A
- Rds On (Max) @ Id, Vgs: 20 mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 3.1V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 800V
- Power - Max: 568W
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock7,872 |
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Cree/Wolfspeed |
MOSFET 6N-CH 1200V 87A MODULE
- FET Type: 6 N-Channel (3-Phase Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 87A
- Rds On (Max) @ Id, Vgs: 34 mOhm @ 50A, 20V
- Vgs(th) (Max) @ Id: 2.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 180nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 2.810nF @ 800V
- Power - Max: 337W
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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Package: Module |
Stock5,440 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 7A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 7A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 600V
- Capacitance @ Vr, F: 220pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock7,808 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 29.5A TO263
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 29.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 480pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock5,520 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 2A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 167pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock3,328 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 15.5A TO252
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 15.5A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 251pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock10,356 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 4A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 60µA @ 650V
- Capacitance @ Vr, F: 251pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock138,000 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 25.5A TO252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 25.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock4,208 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 1.7A 10PQFN
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 1.7A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1.7A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 100pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 10-PowerTQFN
- Supplier Device Package: 10-Power QFN (3.3x3.3)
- Operating Temperature - Junction: -55°C ~ 160°C
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Package: 10-PowerTQFN |
Stock2,176 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 35A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 35A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 12A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 74µA @ 650V
- Capacitance @ Vr, F: 641.5pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock5,712 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 4A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 4A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 60µA @ 650V
- Capacitance @ Vr, F: 251pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock28,038 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.7KV 26.3A TO247
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 26.3A (DC)
- Voltage - Forward (Vf) (Max) @ If: 2.5V @ 25A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1700V
- Capacitance @ Vr, F: 2079pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-247-2 |
Stock7,248 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 5A TO252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 150µA @ 1200V
- Capacitance @ Vr, F: 390pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-252-3, DPak (2 Leads + Tab), SC-63 |
Stock59,508 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 600V 10A TO263-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 600V
- Current - Average Rectified (Io): 10A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 600V
- Capacitance @ Vr, F: 480pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Stock26,490 |
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Cree/Wolfspeed |
DIODE SCHOTTKY 1.2KV 2A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 167pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220-2
- Operating Temperature - Junction: -55°C ~ 175°C
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Package: TO-220-2 |
Stock24,792 |
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Cree/Wolfspeed |
DIODE ARRAY SCHOTTKY 1200V TO247
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 22A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Package: TO-247-3 |
Stock14,304 |
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Cree/Wolfspeed |
DIODE ARRAY SCHOTTKY 1200V TO247
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 27A
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 200µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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Package: TO-247-3 |
Stock22,836 |
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Cree/Wolfspeed |
EVAL BOARD FOR CGHV27060
- Type: HEMT
- Frequency: 0Hz ~ 2.7GHz
- For Use With/Related Products: CGHV27060
- Supplied Contents: Board
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Package: - |
Stock4,950 |
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Cree/Wolfspeed |
TEST BOARD FOR CGHV40050F
- Type: Transistor
- Frequency: 0Hz ~ 4GHz
- For Use With/Related Products: CGHV40050
- Supplied Contents: Partially Populated Board - Main IC Not Included
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Package: - |
Stock7,308 |
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Cree/Wolfspeed |
IC AMP GAN HEMT MMIC 440208
- Frequency: 13.75GHz ~ 14.5GHz
- P1dB: -
- Gain: 24dB
- Noise Figure: -
- RF Type: -
- Voltage - Supply: 40V
- Current - Supply: -
- Test Frequency: -
- Package / Case: 440208
- Supplier Device Package: 440208
|
Package: 440208 |
Stock8,028 |
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Cree/Wolfspeed |
IC AMP GAN HEMT MMIC 780019
- Frequency: 2.5GHz ~ 6GHz
- P1dB: -
- Gain: 24dB
- Noise Figure: -
- RF Type: -
- Voltage - Supply: 6 V ~ 28 V
- Current - Supply: 20mA ~ 10A
- Test Frequency: 2.5GHz ~ 6GHz
- Package / Case: 780019
- Supplier Device Package: 780019
|
Package: 780019 |
Stock6,858 |
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