Cree/Wolfspeed Products

MOSFET N-CH 900V 22A

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

MOSFET NCH 1.7KV 72A TO247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 18mA
• Gate Charge (Qg) (Max) @ Vgs: 188nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 3672pF @ 1kV
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 520W (Tc)
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 50A, 20V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

MOSFET N-CH 1200V 10A TO-247-3

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.8V @ 1.25mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 259pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 370 mOhm @ 6A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

RF MOSFET HEMT 50V 20TSSOP

• Transistor Type: HEMT
• Frequency: 2.7GHz ~ 3.5GHz
• Gain: 14.5dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 125mA
• Power - Output: 60W
• Voltage - Rated: 150V
• Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
• Supplier Device Package: 20-TSSOP

RF MOSFET HEMT 28V 12VFDFN

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 18.3dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 200mA
• Power - Output: 30W
• Voltage - Rated: 84V
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x3)

RF MOSFET HEMT 28V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 13dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 120W
• Voltage - Rated: 84V
• Package / Case: Die
• Supplier Device Package: Die

FET RF 84V 2.5GHZ 440199

• Transistor Type: HEMT
• Frequency: 0Hz ~ 2.5GHz
• Gain: 19dB
• Voltage - Test: 28V
• Current Rating: 56A
• Noise Figure: -
• Current - Test: 2A
• Power - Output: 220W
• Voltage - Rated: 84V
• Package / Case: 440199
• Supplier Device Package: 440199

FET RF 84V 6GHZ 440166

• Transistor Type: HEMT
• Frequency: 4.5GHz ~ 6GHz
• Gain: 11dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 250mA
• Power - Output: 30W
• Voltage - Rated: 84V
• Package / Case: 440166
• Supplier Device Package: 440166

FET RF 84V 6GHZ 6QFN

• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 12dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 100mA
• Power - Output: 8W
• Voltage - Rated: 84V
• Package / Case: 6-VDFN Exposed Pad
• Supplier Device Package: 6-QFN-EP (3x3)

DIODE SCHOTTKY 300V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 300V
• Capacitance @ Vr, F: 660pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SILICON 1.7KV 10A CHIP

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 1700V
• Capacitance @ Vr, F: 880pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 3A TO220-F2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 155pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220-F2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 1A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: 80pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 8A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 3V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: 560pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 480pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Isolated Tab
• Supplier Device Package: TO-220-2 Isolated Tab
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 2A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 100A TO247-3

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 100A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 500µA @ 650V
• Capacitance @ Vr, F: 1970pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 20A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 20A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE ARRAY SCHOTTKY 300V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 300V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

EVAL BOARD FOR CGHV27100

• Type: HEMT
• Frequency: 2.5GHz ~ 2.7GHz
• For Use With/Related Products: CGHV27100
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST BOARD

• Type: -
• Frequency: -
• For Use With/Related Products: -
• Supplied Contents: -

EVAL BOARD FOR CGHV14800

• Type: HEMT
• Frequency: 1.2GHz ~ 1.4GHz
• For Use With/Related Products: CGHV14800
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CGHV31500F

• Type: HEMT
• Frequency: 2.7GHz ~ 3.1GHz
• For Use With/Related Products: CGHV31500F
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CGHV96050F2

• Type: FET
• Frequency: 8.4GHz ~ 9.6GHz
• For Use With/Related Products: CGHV96050
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRC CMPA0060002

• Type: Amplifier
• Frequency: 6GHz
• For Use With/Related Products: CMPA0060002F
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRCUIT CGH40010

• Type: HEMT
• Frequency: 0Hz ~ 6GHz
• For Use With/Related Products: CGH40010F/ CGH40010P
• Supplied Contents: Partially Populated Board - Main IC Not Included

IC

• Frequency: 5.5GHz ~ 8.5GHz
• P1dB: -
• Gain: 26dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: 28V
• Current - Supply: -
• Test Frequency: -
• Package / Case: 440213
• Supplier Device Package: 440213

IC AMP GAN HEMT MMIC 440208

• Frequency: 5.5GHz ~ 8.5GHz
• P1dB: -
• Gain: 22dB
• Noise Figure: -
• RF Type: General Purpose
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: 8.4GHz
• Package / Case: 440208
• Supplier Device Package: 440208