Cree/Wolfspeed Products

MOSFET N-CH 1200V 24A TO247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 47.1nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 928pF @ 800V
• Vgs (Max): +25V, -5V
• FET Feature: -
• Power Dissipation (Max): 134W (Tc)
• Rds On (Max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 135°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

1000V, 65 MOHM, G3 SIC MOSFET

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Vgs (Max): +19V, -8V
• FET Feature: -
• Power Dissipation (Max): 113.5W (Tc)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: -
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

MOSFET N-CH 900V 22A

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 17.3nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

FET RF 120V 1.95GHZ 440196

• Transistor Type: Silicon Carbide MESFET
• Frequency: 1.95GHz
• Gain: 15dB
• Voltage - Test: 48V
• Current Rating: 1.8A
• Noise Figure: 3.1dB
• Current - Test: 500mA
• Power - Output: 12W
• Voltage - Rated: 120V
• Package / Case: 440196
• Supplier Device Package: 440196

FET RF 120V 1.95GHZ 440166

• Transistor Type: Silicon Carbide MESFET
• Frequency: 1.95GHz
• Gain: 15dB
• Voltage - Test: 48V
• Current Rating: 1.8A
• Noise Figure: 3.1dB
• Current - Test: 500mA
• Power - Output: 12W
• Voltage - Rated: 120V
• Package / Case: 440166
• Supplier Device Package: 440166

IC HEMT TRANS 60W 50V 2700MZ

• Transistor Type: HEMT
• Frequency: 2.7GHz
• Gain: 16.5dB
• Voltage - Test: 50V
• Current Rating: 6.3A
• Noise Figure: -
• Current - Test: 125mA
• Power - Output: 80W
• Voltage - Rated: 150V
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

FET RF 50V 2.7GHZ 440162

• Transistor Type: HEMT
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 15dB ~ 16dB
• Voltage - Test: 50V
• Current Rating: 12A
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 200W
• Voltage - Rated: 50V
• Package / Case: 440162
• Supplier Device Package: 440162

FET RF 84V 4GHZ 440193

• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 14dB
• Voltage - Test: 28V
• Current Rating: 14A
• Noise Figure: -
• Current - Test: 400mA
• Power - Output: 55W
• Voltage - Rated: 84V
• Package / Case: 440193
• Supplier Device Package: 440193

FET RF 84V 4GHZ 440193

• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 14dB
• Voltage - Test: 28V
• Current Rating: 10.5A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 45W
• Voltage - Rated: 84V
• Package / Case: 440193
• Supplier Device Package: 440193

DIODE SCHOTTKY 600V 16.5A TO263

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 16.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 550pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 16.5A TO220

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 16.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 550pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 10A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 340pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 340pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 4A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 220pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 6A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 295pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 3A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 155pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 8A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 441pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Isolated Tab
• Supplier Device Package: TO-220-2 Isolated Tab
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 5A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 455pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.7KV 14.4A TO247

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 14.4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 2V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 1700V
• Capacitance @ Vr, F: 827pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE ARRAY SCHOTTKY 650V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io) (per Diode): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

DIODE ARRAY SCHOTTKY 600V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

DEMO HEMT TRANS AMP3 CGHV1F006S

• Type: HEMT
• Frequency: 0Hz ~ 18GHz
• For Use With/Related Products: CGHV1F006
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CGHV59070F

• Type: HEMT
• Frequency: 5.2GHz ~ 5.9GHz
• For Use With/Related Products: CGHV59070F
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CGHV59350F

• Type: HEMT
• Frequency: 5.2GHz ~ 5.9GHz
• For Use With/Related Products: CGHV59350
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CMPA1D1E025F

• Type: HEMT
• Frequency: 13.75GHz ~ 14.5GHz
• For Use With/Related Products: CMPA1D1E025
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CGHV35400F

• Type: FET
• Frequency: 2.9GHz ~ 3.5GHz
• For Use With/Related Products: CGHV35400
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRCUIT CGH40090

• Type: HEMT
• Frequency: 500MHz ~ 2.5GHz
• For Use With/Related Products: CGH40090PP
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRCUIT CGH40025

• Type: HEMT
• Frequency: 0Hz ~ 4.5GHz
• For Use With/Related Products: CGH40025F/ CGH40025P
• Supplied Contents: Partially Populated Board - Main IC Not Included