Cree/Wolfspeed Products

MOSFET N-CH SIC 1KV 22A D2PAK-7

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
• Vgs (Max): +15V, -4V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

MOSFET N-CH 900V 35A D2PAK-7

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 2.1V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Vgs (Max): +19V, -8V
• FET Feature: -
• Power Dissipation (Max): 113W (Tc)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

MOSFET N-CH 900V 36A TO247-3

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 2.1V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 30.4nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 600V
• Vgs (Max): +18V, -8V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 78 mOhm @ 20A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

FET RF 28V 6GHZ 440196

• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 14.5dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 200mA
• Power - Output: 12.5W
• Voltage - Rated: 28V
• Package / Case: 440196
• Supplier Device Package: 440196

RF MOSFET HEMT 40V DIE

• Transistor Type: HEMT
• Frequency: 18GHz
• Gain: 17dB
• Voltage - Test: 40V
• Current Rating: -
• Noise Figure: -
• Current - Test: 30mA
• Power - Output: 6W
• Voltage - Rated: 100V
• Package / Case: Die
• Supplier Device Package: Die

RF MOSFET HEMT 28V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 13dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 400mA
• Power - Output: 60W
• Voltage - Rated: 84V
• Package / Case: Die
• Supplier Device Package: Die

FET RF 125V 2.2GHZ 440162

• Transistor Type: HEMT
• Frequency: 1.8GHz ~ 2.2GHz
• Gain: 18dB
• Voltage - Test: 50V
• Current Rating: 12A
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 200W
• Voltage - Rated: 125V
• Package / Case: 440162
• Supplier Device Package: 440162

800-W 1200-1400-MHZ GAN HEMT

• Transistor Type: HEMT
• Frequency: 1.4GHz
• Gain: 14.5dB
• Voltage - Test: 50V
• Current Rating: 24A
• Noise Figure: -
• Current - Test: 800mA
• Power - Output: 900W
• Voltage - Rated: 125V
• Package / Case: 440117
• Supplier Device Package: 440117

RF MOSFET HEMT 50V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 17dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 65mA
• Power - Output: 40W
• Voltage - Rated: 150V
• Package / Case: Die
• Supplier Device Package: Die

FET RF 125V 3.5GHZ 440210

• Transistor Type: HEMT
• Frequency: 2.9GHz ~ 3.5GHz
• Gain: 11dB
• Voltage - Test: 45V
• Current Rating: 24A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 455W
• Voltage - Rated: 125V
• Package / Case: 440210
• Supplier Device Package: 440210

FET RF 84V 6GHZ 440109

• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 13dB
• Voltage - Test: 28V
• Current Rating: 3.5A
• Noise Figure: -
• Current - Test: 100mA
• Power - Output: 8W
• Voltage - Rated: 84V
• Package / Case: 440109
• Supplier Device Package: 440109

MOSFET 2N-CH 1200V 444A MODULE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 444A (Tc)
• Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 400A, 20V
• Vgs(th) (Max) @ Id: 4V @ 105mA
• Gate Charge (Qg) (Max) @ Vgs: 1127nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 3000W
• Operating Temperature: 175°C (TJ)
• Mounting Type: -
• Package / Case: Module
• Supplier Device Package: Module

MOSFET 2N-CH 1200V 404A MODULE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 404A
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 300A, 20V
• Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 1025nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 11700pF @ 600V
• Power - Max: 1660W
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module, Screw Terminals
• Supplier Device Package: Module

DIODE SCHOTTKY 600V 3.5A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 3.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Capacitance @ Vr, F: 120pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 33A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 33A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: 754pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 4A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 251pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 2A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 295pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 4A TO220-F2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 4A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 251pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack, Isolated Tab
• Supplier Device Package: TO-220-F2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: 754pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 10A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 480pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 1A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: 80pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE ARRAY SCHOTTKY 1200V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 9A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 150µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

DIODE ARRAY SCHOTTKY 650V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io) (per Diode): 39A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 16A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 95µA @ 650V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

DEMO HEMT TRANS AMP1 CGHV1F025S

• Type: HEMT
• Frequency: 0Hz ~ 15GHz
• For Use With/Related Products: CGHV1F025
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRCUIT CGH40180

• Type: HEMT
• Frequency: 2.5GHz
• For Use With/Related Products: CGH40180
• Supplied Contents: Partially Populated Board - Main IC Not Included

EVAL BOARD WITH CGHV59070F

• Type: HEMT
• Frequency: 5.2GHz ~ 5.9GHz
• For Use With/Related Products: CGHV59070F
• Supplied Contents: Board

BOARD DEMO AMP CKT CMPA2560025F

• Type: Amplifier
• Frequency: 2.5GHz ~ 6GHz
• For Use With/Related Products: CMPA2560025F
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CGHV40100F

• Type: FET
• Frequency: 500MHz ~ 2.5GHz
• For Use With/Related Products: CGHV40100
• Supplied Contents: Partially Populated Board - Main IC Not Included