Cree/Wolfspeed Products

1000V, 120 MOHM, G3 SIC MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V
• Vgs(th) (Max) @ Id: 3.5V @ 3mA
• Gate Charge (Qg) (Max) @ Vgs: 21.5nC @ 15V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 600V
• Vgs (Max): ±15V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 155 mOhm @ 15A, 15V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-4L
• Package / Case: TO-247-4

FET RF 100V 9.6GHZ 440210

• Transistor Type: HEMT
• Frequency: 7.9GHz ~ 9.6GHz
• Gain: 10.2dB
• Voltage - Test: 40V
• Current Rating: 12A
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 131W
• Voltage - Rated: 100V
• Package / Case: 440210
• Supplier Device Package: 440210

RF MOSFET HEMT 50V 440224

• Transistor Type: HEMT
• Frequency: 4.4GHz ~ 5.9GHz
• Gain: 13.3dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 150mA
• Power - Output: 76W
• Voltage - Rated: 150V
• Package / Case: 440224
• Supplier Device Package: 440224

FET RF 100V 9.6GHZ 440210

• Transistor Type: HEMT
• Frequency: 7.9GHz ~ 9.6GHz
• Gain: 17dB
• Voltage - Test: 40V
• Current Rating: 13A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 32W
• Voltage - Rated: 100V
• Package / Case: 440210
• Supplier Device Package: 440210

FET RF 84V 6GHZ 440166

• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 13dB
• Voltage - Test: 28V
• Current Rating: 7A
• Noise Figure: -
• Current - Test: 250mA
• Power - Output: 30W
• Voltage - Rated: 84V
• Package / Case: 440166
• Supplier Device Package: 440166

RF MOSFET HEMT 40V DIE

• Transistor Type: HEMT
• Frequency: 18GHz
• Gain: 17dB
• Voltage - Test: 40V
• Current Rating: -
• Noise Figure: -
• Current - Test: 360mA
• Power - Output: 70W
• Voltage - Rated: 100V
• Package / Case: Die
• Supplier Device Package: Die

RF MOSFET HEMT 28V 440166

• Transistor Type: HEMT
• Frequency: 3GHz
• Gain: 15dB
• Voltage - Test: 28V
• Current Rating: -
• Noise Figure: -
• Current - Test: 100mA
• Power - Output: 15W
• Voltage - Rated: 84V
• Package / Case: 440166
• Supplier Device Package: 440166

FET RF 84V 6GHZ 440166

• Transistor Type: HEMT
• Frequency: 0Hz ~ 6GHz
• Gain: 14.5dB
• Voltage - Test: 28V
• Current Rating: 3.5A
• Noise Figure: -
• Current - Test: 200mA
• Power - Output: 12.5W
• Voltage - Rated: 84V
• Package / Case: 440166
• Supplier Device Package: 440166

RF MOSFET HEMT 50V 12VFDFN

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 20.4dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 130mA
• Power - Output: 30W
• Voltage - Rated: 125V
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x3)

FET RF 40V 6GHZ 12DFN

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 16dB
• Voltage - Test: 40V
• Current Rating: 950mA
• Noise Figure: -
• Current - Test: 60mA
• Power - Output: 8W
• Voltage - Rated: 100V
• Package / Case: 12-VFDFN Exposed Pad
• Supplier Device Package: 12-DFN (4x3)

MOSFET 6N-CH 1200V 29.5A MODULE

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C: 29.5A
• Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
• Vgs(th) (Max) @ Id: 2.2V @ 1mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 61.5nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 800V
• Power - Max: 167W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

DIODE SILICON 1.7KV 25A CHIP

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1700V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 2V @ 25A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 1700V
• Capacitance @ Vr, F: 2250pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 17.5A TO252

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Capacitance @ Vr, F: 455pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 6A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 295pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 6A TO220-F2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 294pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: TO-220-F2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 6A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 6A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 294pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 8A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Capacitance @ Vr, F: 441pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 8A TO263-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 441pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 650V 32A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 32A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 460.5pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE ARRAY SCHOTTKY 1200V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

DIODE ARRAY SCHOTTKY 650V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io) (per Diode): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 60µA @ 650V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

DIODE ARRAY SCHOTTKY 1200V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

EVAL BOARD FOR CMPA601C025F

• Type: Amplifier
• Frequency: 6GHz ~ 12GHz
• For Use With/Related Products: CMPA601C025F
• Supplied Contents: Partially Populated Board - Main IC Not Included

DEMO HEMT TRANS AMP1 CGHV1F006S

• Type: HEMT
• Frequency: 0Hz ~ 18GHz
• For Use With/Related Products: CGHV1F006
• Supplied Contents: Partially Populated Board - Main IC Not Included

EVAL BOARD FOR CGHV27200

• Type: HEMT
• Frequency: 2.5GHz ~ 2.7GHz
• For Use With/Related Products: CGHV27200
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRCUIT CGH40120

• Type: HEMT
• Frequency: 0Hz ~ 4GHz
• For Use With/Related Products: CGH40120F
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRCUIT CGH40045

• Type: HEMT
• Frequency: 0Hz ~ 4GHz
• For Use With/Related Products: CGH40045F
• Supplied Contents: Partially Populated Board - Main IC Not Included

EVAL BOARD FOR CGHV22200

• Type: HEMT
• Frequency: 1.8GHz ~ 2.2GHz
• For Use With/Related Products: CGHV22200
• Supplied Contents: Partially Populated Board - Main IC Not Included