Cree/Wolfspeed Products

MOSFET N-CH 1200V 42A TO-247-3

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 90.8nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 1915pF @ 800V
• Vgs (Max): +25V, -5V
• FET Feature: -
• Power Dissipation (Max): 215W (Tc)
• Rds On (Max) @ Id, Vgs: 110 mOhm @ 20A, 20V
• Operating Temperature: -55°C ~ 135°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

MOSFET N-CH 1700V 5.3A TO247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK-7
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

MOSFET N-CH 1200V 31.6A TO247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 5mA
• Gate Charge (Qg) (Max) @ Vgs: 62nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 192W (Tc)
• Rds On (Max) @ Id, Vgs: 98 mOhm @ 20A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

MOSFET N-CH 1700V 4.9A TO247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.4V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 191pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 69W (Tc)
• Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

MOSFET N-CH 1200V 19A TO-247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 32.6nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 527pF @ 800V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 196 mOhm @ 10A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

MOSFET N-CH 1700V 5.3A TO247

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1700V
• Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 3.1V @ 500µA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 1000V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 78W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2A, 20V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (7-Lead)
• Package / Case: TO-263-7 (Straight Leads)

FET RF 120V 1.1GHZ 440193

• Transistor Type: Silicon Carbide MESFET
• Frequency: 1.1GHz
• Gain: 13dB
• Voltage - Test: 48V
• Current Rating: 9A
• Noise Figure: -
• Current - Test: 2A
• Power - Output: 60W
• Voltage - Rated: 120V
• Package / Case: 440193
• Supplier Device Package: 440193

200-W 4400-5000-MHZ 50-OHM I

• Transistor Type: HEMT
• Frequency: 5GHz
• Gain: 11.8dB
• Voltage - Test: 40V
• Current Rating: 17A
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 200W
• Voltage - Rated: 125V
• Package / Case: 440217
• Supplier Device Package: 440217

RF MOSFET HEMT 50V DIE

• Transistor Type: HEMT
• Frequency: 6GHz
• Gain: 17dB
• Voltage - Test: 50V
• Current Rating: -
• Noise Figure: -
• Current - Test: 260mA
• Power - Output: 170W
• Voltage - Rated: 150V
• Package / Case: Die
• Supplier Device Package: Die

FET RF 125V 1.4GHZ 440117

• Transistor Type: HEMT
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 17dB
• Voltage - Test: 50V
• Current Rating: 36A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 500W
• Voltage - Rated: 125V
• Package / Case: 440117
• Supplier Device Package: 440117

FET RF 100V 9.6GHZ 440210

• Transistor Type: HEMT
• Frequency: 7.9GHz ~ 9.6GHz
• Gain: 10dB
• Voltage - Test: 40V
• Current Rating: 6A
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 70W
• Voltage - Rated: 100V
• Package / Case: 440210
• Supplier Device Package: 440210

FET RF 125V 1.4GHZ 440162

• Transistor Type: HEMT
• Frequency: 1.2GHz ~ 1.4GHz
• Gain: 18dB
• Voltage - Test: 50V
• Current Rating: 42mA
• Noise Figure: -
• Current - Test: 500mA
• Power - Output: 330W
• Voltage - Rated: 125V
• Package / Case: 440162
• Supplier Device Package: 440162

FET RF 84V 4GHZ 440193

• Transistor Type: HEMT
• Frequency: 0Hz ~ 4GHz
• Gain: 19dB
• Voltage - Test: 28V
• Current Rating: 28A
• Noise Figure: -
• Current - Test: 1A
• Power - Output: 120W
• Voltage - Rated: 84V
• Package / Case: 440193
• Supplier Device Package: 440193

RF MOSFET HEMT 40V DIE

• Transistor Type: HEMT
• Frequency: 18GHz
• Gain: 17dB
• Voltage - Test: 40V
• Current Rating: -
• Noise Figure: -
• Current - Test: 120mA
• Power - Output: 25W
• Voltage - Rated: 100V
• Package / Case: Die
• Supplier Device Package: Die

MOSFET 2N-CH 1700V 325A MODULE

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C: 325A
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 225A, 20V
• Vgs(th) (Max) @ Id: 2.3V @ 15mA (Typ)
• Gate Charge (Qg) (Max) @ Vgs: 1076nC @ 20V
• Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 1000V
• Power - Max: 1760W
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

DIODE SCHOTTKY 650V 11.5A TO252

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 11.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 650V
• Capacitance @ Vr, F: 155pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 8A TO252-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Capacitance @ Vr, F: 11pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 1.2KV 8.2A TO220

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 8.2A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 150µA @ 1200V
• Capacitance @ Vr, F: 390pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE SCHOTTKY 600V 2.2A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 2.2A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Capacitance @ Vr, F: 80pF @ 0V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220-2
• Operating Temperature - Junction: -55°C ~ 175°C

DIODE ARRAY SCHOTTKY 1200V 21.5A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 21.5A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 200µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

DIODE SCHOTTKY 1.2KV 24.5A TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 24.5V (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

TEST FIXTURE FOR CGHV27060MP

• Type: HEMT
• Frequency: 0Hz ~ 2.7GHz
• For Use With/Related Products: CGHV27060
• Supplied Contents: Partially Populated Board - Main IC Not Included

BOARD DEMO AMP CIRCUIT CGH40035

• Type: HEMT
• Frequency: 0Hz ~ 6GHz
• For Use With/Related Products: CGH40035F
• Supplied Contents: Partially Populated Board - Main IC Not Included

EVAL BOARD FOR CMPA5585025F

• Type: Amplifier
• Frequency: 5.5GHz ~ 8.5GHz
• For Use With/Related Products: CMPA5585025F
• Supplied Contents: Partially Populated Board - Main IC Not Included

RF EVAL HEMT AMPLIFIER

• Type: Amplifier
• Frequency: 4.5GHz ~ 6GHz
• For Use With/Related Products: CGH55030
• Supplied Contents: Partially Populated Board - Main IC Not Included

TEST FIXTURE FOR CGHV14250

• Type: FET
• Frequency: 1.2GHz ~ 1.4GHz
• For Use With/Related Products: CGHV14250
• Supplied Contents: Partially Populated Board - Main IC Not Included

IC AMP GAN HEMT MMIC 440208

• Frequency: 8.5GHz ~ 11GHz
• P1dB: -
• Gain: 15.8dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: 28V
• Current - Supply: -
• Test Frequency: -
• Package / Case: Module
• Supplier Device Package: Module

IC AMP GAN HEMT MMIC 440208

• Frequency: 8.5GHz ~ 11GHz
• P1dB: -
• Gain: 24dB
• Noise Figure: -
• RF Type: -
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: -
• Package / Case: 440208
• Supplier Device Package: 440208